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Doping profiles in SC crystals - are produced by diffusion of impurity centres consisting of nickel atoms using dissociative diffusion mechanism
Doping profiles in SC crystals - are produced by diffusion of impurity centres consisting of nickel atoms using dissociative diffusion mechanism
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机译：SC晶体中的掺杂分布-通过使用解离扩散机制扩散由镍原子组成的杂质中心产生
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摘要
The SC crystal is made of silicon, and before nickel diffusion it is either N-conducting, with an impurity centres concentration not exceeding 5 x 1015 atoms/cm3, or P-conducting; nickel is then diffused into the crystal at a concentration corresponding to the difference between the doping concentrations of different zones to be produced (N-N-; N-P; P-P+); at a temperature corresponding to the solubility of this nickel concentration in the SC crystal; then the crystal is cooled, so that zones with different conductance are produced. The crystal consists of a thin plate, and its surface layers are covered with nickel.
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机译：SC晶体由硅制成，在镍扩散之前，它要么是N导电的，杂质中心浓度不超过5 x 1015原子/ cm3，要么是P导电的。然后，镍以与要产生的不同区域（N-N-; N-P; P-P +）的掺杂浓度之间的差相对应的浓度扩散到晶体中。在与该镍浓度在SC晶体中的溶解度相对应的温度下;然后将晶体冷却，从而产生具有不同电导率的区域。晶体由一块薄板组成，其表面覆盖着镍。
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