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INTEGRATED SCALE STRUCTURES WITH INDIVIDUAL SELF-EDUCATING BARRIERS
INTEGRATED SCALE STRUCTURES WITH INDIVIDUAL SELF-EDUCATING BARRIERS
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机译：具有个别自我教育障碍的综合规模结构
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摘要
Integrated circuit structures with undressed self-forming barriers and procedures for the production of integrated circuit structures with undressed self-forming barriers are described. For an example, an integrated circuit structure contains a dielectric material above a substrate. An intermediate connection structure is located in a ditchn in the dielectric material. The interlinking structure includes a conductive filling material and a two-dimensional (2D) crystalline lining. The crystalline 2D lining is in direct contact with the dielectric material and with the conductive filling material. The crystalline 2D lining contains the same metal specifications as the conductive filling material.
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