[Solution] A halftone phase shift film using a sputter gas containing a rare gas and a nitrogen-containing gas, and a plurality of targets including two or more silicon targets, to two or more silicon targets, different power values of two or more A method of manufacturing a halftone phase shift mask blank in which a film is formed while applying electric power to a film while rotating the piece put surface of a transparent substrate along a horizontal direction by reactive sputtering. [Effect] In the halftone phase shift film containing silicon and nitrogen having excellent chemical resistance, the uniformity of the optical properties within the film surface is good, and when the halftone phase shift film pattern is formed from the halftone phase shift film. A halftone phase shift film having good verticality of the cross-sectional shape of the obtained halftone phase shift film pattern can be formed.
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