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Magnetically Enhanced High Density Plasma-Chemical Vapor Deposition Plasma Source For Depositing Diamond and Diamond-Like Films

机译：磁性增强的高密度等离子体 - 化学气相沉积等离子体源用于沉积金刚石和金刚石薄膜

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摘要

A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

机译：磁性增强的HDP-CVD等离子体源包括空心阴极靶和阳极。阳极和阴极形成间隙。阴极靶磁体组件形成基本垂直于阴极靶表面的磁场线。间隙磁体组件在与阴极靶磁场联接的间隙中形成尖磁场。磁场线通过位于间隙中的极件电极交叉。该杆子从地面隔离，可以与电压电源连接。极靴可以具有负，正或浮动电位。等离子体源可以被配置为产生体积放电。间隙尺寸禁止在间隙中产生等离子体放电。通过控制极靴上电势的持续时间，值和符号，可以控制等离子体电离。磁性增强的HDP-CVD源也可用于化学增强的电离物理气相沉积（CE-IPVD）。气体流过空心阴极和阳极之间的间隙。阴极目标是电感接地，并且基板周期性地接地。

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公开/公告号US2021115552A1

专利类型
公开/公告日2021-04-22

原文格式PDF
申请/专利权人 IONQUEST CORP.;
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申请/专利号US202017124691
发明设计人 BASSAM HANNA ABRAHAM;ROMAN CHISTYAKOV;
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申请日2020-12-17
分类号C23C14/35;C23C14/34;H01J37/34;H01L21/285;H01L21/768;H01L23/522;H01L23/532;H01J37/32;C23C14;C23C14/06;C23C14/14;
国家 US
入库时间 2022-08-24 18:20:13

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