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METHOD OF PREDICTING EDUCATIONAL BEHAVIOR OF THERMAL DONATORS IN A SILICON WAFER, METHOD OF EVALUATING A SILICON WAFER, AND METHOD OF PRODUCING A SILICON WAFER
METHOD OF PREDICTING EDUCATIONAL BEHAVIOR OF THERMAL DONATORS IN A SILICON WAFER, METHOD OF EVALUATING A SILICON WAFER, AND METHOD OF PRODUCING A SILICON WAFER
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机译：预测硅晶片中热捐献器的教育行为的方法，评估硅晶片的方法，以及制造硅晶片的方法
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摘要
A method of predicting a formation behavior of thermal donors generated due to oxygen generated when heat treatment is performed on a silicon wafer, comprising: a first step of setting an initial oxygen concentration condition prior to performing the heat treatment on the silicon wafer for reaction rate equations based on both a bond dissociation model of oxygen clusters associated with diffusion of interstitial oxygen and a bond model of oxygen clusters associated with diffusion of oxygen dimers; a second step of calculating a rate of formation of oxygen clusters, formed by the heat treatment using the reaction rate equations; anda third step of calculating a formation rate of thermal donors formed by the heat treatment based on the formation rate of the oxygen clusters, wherein the reaction rate equations are the following formulas (1) to (4): d [O1] dt = −2kf1 [O1] 2 − kf1 [O1] (∑n = 2M − 1 [On]) + 2kb2 [O2] −kf2 [O2] [O1] + ∑n = 3M − 1kbn [On] d [O2] dt = kf1 [O1] 2 − kf1 [O2] [O1] −kb2 [O2] + kb3 [O3] −kf2 [O2] ([O1] +2 [O2] + ∑n = 3M − 2 [On]) d [On ] dt = kf1 [O1] [On − 1] −kf1 [O1] [On] + kf2 [O2] ([On − 2] - [On]) - kbn [On] + kbn + 1 [On + 1] d [Om] dt = kf1 [O1] [OM − 1] −kf1 [O1] [OM] + kf2 [O2] ([OM − 2] −kbM [OM] where t represents a time; M a maximum number of Oxygen clusters that become donors; [O1] and [On] represent concentrations of interstitial oxygen Oib and oxygen clusters On, respectively; kf1 is a combination rate coefficient of interstitial oxygen which, depending on a heat treatment temperature, is bound to either other interstitial oxygen or oxygen clusters is; kf2 is a combination rate coefficient t is of oxygen dimers which, depending on the heat treatment temperature, are bound to either other interstitial oxygen or oxygen clusters; kb2 is a dissociation rate constant of interstitial oxygen which is dissociated from oxygen dimers to form two interstitial oxygen atoms; kbn is a dissociation rate constant of interstitial oxygen dissociated from oxygen clusters having a cluster number n; n 3 n M-1 in the above formula (3) is satisfied; and Formula (3) (M-3) expresses simultaneous equations expressing the change of [On] with time, where 3 n M-1, and where the rate of generation of thermal donors in the third step using the following Formula (5) is calculated in which a minimum cluster number of the oxygen clusters that form donors is m, d [TD] dt = 2∑n = mMd [On] dt, where [TD] is a concentration of thermal donors TD .
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