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Semiconductor structure with silver-indium transient liquid phase bonding method and silver-indium transient liquid phase bonding joint between a semiconductor device and a thermal diffusion mount
Semiconductor structure with silver-indium transient liquid phase bonding method and silver-indium transient liquid phase bonding joint between a semiconductor device and a thermal diffusion mount
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机译：具有银铟型瞬态液相粘接方法的半导体结构和半导体器件和热扩散支架之间的银铟瞬态液相键合接头
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摘要
Provided are a method of silver-indium transient liquid phase bonding between a semiconductor device and a thermal diffusion mount, and a semiconductor structure having a silver-indium transient liquid phase bonding joint. Having an ultrathin silver-indium transient liquid phase junction joint formed between the semiconductor device and the thermal diffusion mount minimizes its thermal resistance in order to achieve high thermal conductivity. Can be done. As a result, the thermal diffusion capability of the thermal diffusion mount can be fully realized, which leads to the optimum performance of high-power electronic equipment and optical engineering equipment.
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