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A semiconductor structure having a silver-indium transition liquid-phase method and a silver-indium transition liquid-phase bonding joint for bonding a semiconductor device and a thermal-diffusion mount
A semiconductor structure having a silver-indium transition liquid-phase method and a silver-indium transition liquid-phase bonding joint for bonding a semiconductor device and a thermal-diffusion mount
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机译：具有银铟转变液相方法的半导体结构和用于粘合半导体器件和热扩散支架的银铟转变液相键合接头
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摘要
A semiconductor structure having a silver-indium transition liquid phase method and a silver-indium transition liquid phase bonding joint for bonding a semiconductor device and a thermal-diffusion mount is provided. The ultra-thin silver-indium transition liquid-phase bonding joint formed between the semiconductor device and the thermal-diffusion mount minimizes thermal resistance to achieve high thermal conductivity. Therefore, the heat-diffusion ability of the heat-diffusion mount can be fully realized, which leads to the optimum performance of high-power electronics and photonics devices.
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