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Marching memory, a bidirectional marching memory, a complex marching memory and a computer system, without the memory bottleneck
Marching memory, a bidirectional marching memory, a complex marching memory and a computer system, without the memory bottleneck
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机译：游行内存，双向行进记忆，一个复杂的行进内存和计算机系统，没有内存瓶颈
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摘要
A marching memory is disclosed having an array of memory units. Each memory unit has a sequence of bit level cells. Each bit-level cell has a transfer-transistor having a first main-electrode connected to a clock signal supply line through a first delay element, and a control-electrode connected to an output terminal of a first neighboring bit-level cell positioned at an input side of the array of the memory units, through a second delay element. Each bit-level cell also has a reset-transistor having a first main-electrode connected to a second main-electrode of the transfer-transistor, a control-electrode connected to the clock signal supply line, and a second main-electrode connected to the ground potential. Each bit-level cell also has a capacitor connected in parallel with the reset-transistor.
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