首页>
外国专利>
Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer
Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer
展开▼
机译：用于RF SOI陷阱的多晶硅和富氧多晶硅设计的多层多晶硅和氧掺杂多晶硅设计
展开▼
页面导航
摘要
著录项
相似文献
摘要
In some embodiments, the present disclosure relates to a high-resistivity silicon-on-insulator (SOI) substrate, including a first polysilicon layer arranged over a semiconductor substrate. A second polysilicon layer is arranged over the first polysilicon layer, and a third polysilicon layer is arranged over the second polysilicon layer. An active semiconductor layer over an insulator layer may be arranged over the third polysilicon layer. The second polysilicon layer has an elevated concentration of oxygen compared to the first and third polysilicon layers.
展开▼
