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SiN Si Si precursors for deposition of SiN at low temperatures
SiN Si Si precursors for deposition of SiN at low temperatures
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机译：SIN SI SI前体用于在低温下沉积罪
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摘要
Precursors and methods are provided for depositing silicon nitride films by atomic layer deposition (ALD). In some embodiments, the silicon precursors include an iodine ligand. Silicon nitride films are FinFETs or other types of multi-gate FETs. It can have a relatively uniform etch rate for both the horizontal and vertical portions when deposited on a three-dimensional structure such as a liquid crystal layer, etc. In some embodiments, various silicon nitride films of the present invention have half the thermal oxide removal rate. It has an etch rate of less than in dilute HF (0.5%).
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