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SOT-MRAM MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
SOT-MRAM MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM
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机译：SOT-MRAM磁隧道结合SOT-MRAM的合成自由层
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摘要
A magnetic memory device includes a spin orbital torque (SOT) induced spin Hall electrode and a free layer of a magnetic tunnel junction (MTJ) stack, a composite antiferromagnetic structure disposed on the spin Hall electrode. The free layer has a magnetic moment that is tilted with respect to the long axis of the MTJ stack and tilted with respect to the direction of current flow through the spin Hall electrode. The MTJ stack internally generates a magnetic field to switch the state of the free layer. The free layer includes a first layer separated from a second layer by a spacer layer, the first and second layers may have the same or different crystalline structures.
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