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HIGH PERFORMANCE NANOSHEET FABRICATION METHOD WITH ENHANCED HIGH MOBILITY CHANNEL ELEMENTS
HIGH PERFORMANCE NANOSHEET FABRICATION METHOD WITH ENHANCED HIGH MOBILITY CHANNEL ELEMENTS
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机译：高性能纳米片制造方法，具有增强的高迁移渠道元件
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摘要
In a method for forming a semiconductor device, an epitaxial layer stack is formed over a substrate. The epitaxial layer stack includes intermediate layers, one or more first nano layers with a first bandgap value and one or more second nano layers with a second bandgap value. Trenches are formed in the epitaxial layer stack to separate the epitaxial layer stack into sub-stacks such that the one or more first nano layers are separated into first nano-channels, and the one or more second nano layers are separated into second nano-channels. The intermediate layers are recessed so that the first nano-channels and the second nano-channels in each of the sub-stacks protrude from sidewalls of the intermediate layers. Top source/drain (S/D) regions are formed in the trenches and in direct contact with the first nano-channels. Bottom source/drain (S/D) regions are formed in the trenches and in direct contact with the second nano-channels.
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