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THREE-DIMENSIONAL MEMORY DEVICE WITH VERTICAL FIELD EFFECT TRANSISTORS AND METHOD OF MAKING THEREOF

机译：具有垂直场效应晶体管的三维存储器件及其制造方法

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摘要

A semiconductor structure includes at least one set of vertical field effect transistors embedded within dielectric material layers overlying a substrate. Each vertical field effect transistor includes a bottom doped semiconductor electrode, a vertical transistor channel, a cylindrical gate dielectric, and a top doped semiconductor electrode. A three-dimensional NAND memory array can be provided over the first field effect transistors, and can be electrically connected to the vertical field effect transistors via metal interconnect structures. Alternatively, a three-dimensional NAND memory array can be formed on another substrate, which can be bonded to the substrate via metal-to-metal bonding. The vertical field effect transistors can be employed as switches for bit lines, word lines, or other components of the three-dimensional NAND memory array.

机译：半导体结构包括嵌入覆盖基板的介电材料层内的至少一组垂直场效应晶体管。每个垂直场效应晶体管包括底部掺杂的半导体电极，垂直晶体管通道，圆柱形栅极电介质和顶掺杂半导体电极。可以通过第一场效应晶体管提供三维NAND存储器阵列，并且可以通过金属互连结构电连接到垂直场效应晶体管。或者，可以在另一个基板上形成三维NAND存储器阵列，其可以通过金属 - 金属键合可以粘合到基板上。垂直场效应晶体管可以用作位线，字线或三维NAND内存阵列的其他组件的开关。

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公开/公告号US2022068954A1

专利类型
公开/公告日2022-03-03

原文格式PDF
申请/专利权人 SANDISK TECHNOLOGIES LLC;
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申请/专利号US202017007761
发明设计人 KWANG-HO KIM;PETER RABKIN;
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申请日2020-08-31
分类号H01L27/11582;H01L27/11556;H01L27/1157;H01L29/66;H01L29/78;H01L27/11565;H01L23/522;H01L23/528;H01L27/11519;H01L27/11524;
国家 US
入库时间 2022-08-24 23:42:37

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