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Schematics for integrating devices using a bulk semiconductor substrate with a < I don't know what to do. Crystal orientation

机译：集成器件的原理图，使用大块半导体衬底和<我不知道该怎么做。晶体取向

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摘要

Structures with devices such as transistors integrated on a bulk semiconductor substrate, and methods for producing a structure with devices such as transistors integrated on a bulk semiconductor substrate. The bulk semiconductor substrate comprises a single crystal semiconductor material with a diamond lattice structure and a I don't know what to do. Crystal orientation. A first transistor is in a first device rangeThe bulk semiconductor substrate is formed and a second transistor is formed in a second device region of the bulk semiconductor substrate. The second transistor comprises a layer stack on the bulk semiconductor substrate and the layer stack comprises a layerwhich is formed from an Ill-V compound semiconductor material.

机译：具有集成在块体半导体衬底上的晶体管等器件的结构，以及用于制造具有集成在块体半导体衬底上的晶体管等器件的结构的方法。块体半导体衬底由具有金刚石晶格结构的单晶半导体材料和我不知道该怎么做的半导体材料组成。晶体取向。第一晶体管位于第一器件范围内，形成体半导体衬底，第二晶体管形成在体半导体衬底的第二器件区域内。第二晶体管包括位于本体半导体衬底上的层堆栈，层堆栈包括由Ill-V化合物半导体材料形成的层。

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公开/公告号DE102021123323A1

专利类型
公开/公告日2022-04-21

原文格式PDF
申请/专利权人 GLOBALFOUNDRIES U.S. INC.;
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申请/专利号DE202110123323
发明设计人 MARK LEVY;JEONGHYUN HWANG;SIVA P. ADUSUMILLI;
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申请日2021-09-09
分类号H01L27/088;H01L21/8249;H01L29/20;H01L21/76;H01L21/8234;H01L21/18;
国家 DE
入库时间 2022-08-25 00:36:16

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