摘要：
As the working bandwidth of communication, electronic warfare and test equipment increases,the bandwidth requirements of the corresponding power amplifiers are also increasing. The GaN HEMT based on the third-generation semiconductor material,has the characteristics of broadband operating,which has the potential to meet the demands of new applications. Using the transmission line transformer(TLT)with ferrite core to match GaN HEMT,designed a broadband power amplifier working in the 20 MHz to 1000 MHz band. The model of TLT with ferrite core is established,and its parameters are optimized by simulation,which expands the low frequency of the power amplifier. The test results show that in the entire bandwidth, the output power≥107 W, gain≥11.3 dB, power additional efficiency≥34.5％. Successfully expand operation octave from 3 to above 5. This power amplifier is suitable for EMC testing,electronic warfare,broadband communication and other systems with wide bandwidth and high-power requirements.%随着通信、对抗和测试设备的工作带宽逐渐增加,对相应功率放大器的带宽要求也越来越宽,而基于第三代半导体材料的GaN HEMT具备宽工作频带的特性,有满足新需求的潜力.运用传输线变压器(Transmission Line Transformer,TLT)加载铁氧体磁芯的技术对GaN HEMT进行宽带匹配,研制了工作于20～1000 MHz的功率放大器.通过建立和优化TLT模型,拓展频率低端,最终测试结果表明,在整个带宽内,输出功率≥107 W,增益≥11.3 dB,功率附加效率≥34.5％,成功将此功率量级的宽带功率放大器工作倍频层由3拓展到5以上.此功率放大器适用于同时要求宽带宽和高功率的系统中,如EMC测试、电子对抗和宽带通讯等.
