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首页> 外文会议>2019 15th Conference on Ph.D Research in Microelectronics and Electronics >Low-Cost and High-Integration Optical Time Domain Reflectometer using CMOS Technology
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Low-Cost and High-Integration Optical Time Domain Reflectometer using CMOS Technology

机译：使用CMOS技术的低成本，高集成度光时域反射仪

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摘要

This paper describes the design of application specific integrated circuit (ASIC) technology for optical time domain reflectometer (OTDR) which is used for optical signal transmission and reception. Conventional OTDR products are implemented with discrete integrated circuit (IC) devices. However, these configurations are vulnerable to noise, leading to the limitation to achieving high dynamic range (DR) and signal to noise ratio (SNR). In addition, it is difficult to lower power consumption and cost, since each IC requires its own power consumption with large area. Therefore, we propose a high-DR OTDR that shows low power consumption and small chip area. The proposed OTDR chip is fabricated with a 350nm 2-poly 4-metal CMOS process and the area iss 5mm × 4mm. The measurement results show that power consumption of analog-to-digital converter (ADC) is under 100μW with 3.3V of the power supply.
机译：本文介绍了用于光时域反射仪（OTDR）的专用集成电路（ASIC）技术的设计，该技术用于光信号的发送和接收。常规的OTDR产品通过分立集成电路（IC）器件实现。但是，这些配置容易受到噪声的影响，导致实现高动态范围（DR）和信噪比（SNR）受到限制。另外，由于每个IC都需要自己的大面积功耗，因此很难降低功耗和成本。因此，我们提出了一种高DR OTDR，它显示了低功耗和小芯片面积。拟议的OTDR芯片采用350nm 2多晶硅4金属CMOS工艺制造，面积为5mm×4mm。测量结果表明，采用3.3V电源时，模数转换器（ADC）的功耗低于100μW。

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