128x128 MWIR FPA on the base of epitaxial layer MCT grown by MOCVD

机译：通过MOCVD生长的外延层MCT上的128x128 MWIR FPA

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MWIR 128x128 Focal Plane Array (FPA) performance has been investigated. FPA has been fabricated on the base of HgCdTe active layers grown on (111)B GaAs substrate by Metal Organic Chemical Vapor Deposition (MOCVD). Histograms and diagrams of photodiodes current, responsivity and detectivity have been plotted for FPA with cutoff value 5,1 μm at T=200K.

机译：已经研究了MWIR 128x128焦平面阵列（FPA）的性能。通过金属有机化学气相沉积（MOCVD）在（111）B GaAs衬底上生长的HgCdTe活性层的基础上制造了FPA。已经绘制了FPA在T = 200K时的截止值为5.1μm的直方图和光电二极管电流，响应度和检测度的图表。

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来源
《17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia》|2002年|p.86-90|共5页
会议地点 Moscow(RU)
作者
K.O.Boltar; N.I.Iakovleva; S.V. Golovin; V.P.Ponomarenko; V.I.Stafeev; I.D.Bourlakov; A.N.Moiseev; A.P.Kotkov; V.V.Dorofeev;
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作者单位

State Scientific Center of Russian Federation "RDP Center ORION", Moscow, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
MCT; epitaxial layers; HgCdTe; FPA; MWIR; MOCVD;

机译：MCT;外延层; HgCdTe; FPA; MWIR; MOCVD;

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4. 128x128 MWIR FPA on the base of epitaxial layer MCT grown by MOCVD [C] . K.O.Boltar, N.I.Iakovleva, S.V. Golovin, International conference on photoelectronics and night vision devices . 2003

机译：由MOCVD种植的外延层MCT基础上的128x128 MWIR FPA
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128x128 MWIR FPA on the base of epitaxial layer MCT grown by MOCVD

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