SIMULATIONS OF SILICON MICROSTRUCTURE FOR PRECONCENTRATION OF METALLIC IONS

机译：用于金属离子预浓缩的硅微结构的模拟

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This work presents the simulation results of the fluid flow behavior inside a preconcentrator microstructure. The preconcentrator was implemented in silicon using reactive ion etching, SF_6 based, to define the channels and anodic bonding between silicon and borosilicate glass for sealing. The preconcentrator design takes in account the enhancement of surface to area ratio, by dividing the flow until it reaches 50 μm channels. The internal flow was analyzed using the commercial package ANSYS/FLOTRAN. Vortex formation was not observed under the simulation conditions and resolution, for water flow (100 μl/min). The flow is essentially laminar and velocity changes (variations) can be observed, that can influence the residence time of the species inside the microstructure and, consequently, the diffusion/adsorption mechanisms.

机译：这项工作提出了预浓缩器微结构内部流体流动行为的模拟结果。使用基于SF_6的反应离子刻蚀在硅中实现预浓缩器，以定义硅和硼硅酸盐玻璃之间用于密封的通道和阳极键合。预浓缩器的设计考虑了表面积比的提高，方法是分流直至达到50μm的通道。使用商业软件包ANSYS / FLOTRAN分析内部流量。对于水流量（100μl/ min），在模拟条件和分辨率下未观察到涡流形成。流动基本上是层流的，可以观察到速度变化（变化），这会影响物种在微结构内部的停留时间，进而影响扩散/吸附机制。

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来源
《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.420-427|共8页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
J. A. Fracassi da Silva; R. Furlan; E. W. Simoes; M. L. P. da Silva; M. T. Pereira;
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作者单位

Escola Politecnica, Universidade de Sao Paulo, Av. Prof. Luciano Gualberto,158, trav. 3, CEP 05508-900, Sao Paulo, SP, Brazil;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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SIMULATIONS OF SILICON MICROSTRUCTURE FOR PRECONCENTRATION OF METALLIC IONS

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