ON THE MODELLING OF THE DARK CURRENT CHARACTERISTICS OF HETERODIMENSIONAL SCHOTTKY PHOTODIODES

机译：三维肖特基光电二极管暗电流特性的建模研究

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This paper deals with the modeling of the electronic characteristics of semiconductor devices based on heterodimensional Schottky contacts, defined as contacts between a metal and a reduced dimensionality system. Devices of interest are Schottky diodes as well as metal-semiconductor-metal (MSM) structures. For the current-voltage characteristics an unified model is presented, considering the tunneling as well as the thermionic emission mechanisms. Our theoretical predictions, supported by experimental findings, suggest that, for photodetection applications, the use of heterodimensional contacts, replacing conventional metal-semiconductor junctions, can reduce the dark current by at least one order of magnitude.

机译：本文研究了基于异质肖特基接触的半导体器件电子特性的建模，异质肖特基接触定义为金属和降维系统之间的接触。感兴趣的器件是肖特基二极管以及金属-半导体-金属（MSM）结构。对于电流-电压特性，考虑了隧穿以及热电子发射机理，提出了一个统一的模型。我们的理论预测得到实验结果的支持，这表明，对于光电检测应用，使用异维接触代替传统的金属-半导体结，可以将暗电流降低至少一个数量级。

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来源
《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.215-221|共7页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
R. Ragi; M. A. Romero; B. Nabet;
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作者单位

Dept. of Electr. Eng., University of Sao Paulo, CP 359, Sao Carlos, SP, Brazil;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact [J] . Jiang H., Egawa T., Ishikawa H., Electronics Letters . 2003,第22期

机译：使用氧化IrNi肖特基接触的低暗电流GaN肖特基UV光电二极管
2. Electrical modeling of InAs/GaSb superlattice mid-wavelength infrared pin photodiode to analyze experimental dark current characteristics [J] . Marie Delmas, Jean-Baptiste Rodriguez, Philippe Christol Journal of Applied Physics . 2014,第11期

机译：InAs / GaSb超晶格中波长红外pin光电二极管的电气建模，以分析实验性暗电流特性
3. High-k dielectric interlayered ITO/germanium Schottky photodiodes with low dark current and high photoconductive gain [J] . Journal of Materials Science . 2020,第20期

机译：高k电介质层间ITO /锗肖特基光电二极管，具有低暗电流和高光电导的增益
4. Modeling the C-V Characteristics of Heterodimensional Schottky Contacts [C] . R. Ragi, J. Manzoli, M. A. Romero, European solid-state device research conference . 2002

机译：造型异二代肖特基触点的C-V特征
5. Planar Engineering for Dark Current Suppression in Type-II Superlattice Infrared Photodiodes. [D] . Bogdanov, Simeon. 2014

机译：II型超晶格红外光电二极管中暗电流抑制的平面工程。
6. Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes [O] . Min-Woo Ha, Ogyun Seok, Hojun Lee, 2020

机译：基于P型伪垂直金刚石肖特基势垒二极管正向电流-电压特性的迁移模型
7. High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current [O] . Tut, T., Biyikli, N., Kimukin I., 2005

机译：具有低暗电流的高带宽效率日盲型AlGaN肖特基光电二极管

ON THE MODELLING OF THE DARK CURRENT CHARACTERISTICS OF HETERODIMENSIONAL SCHOTTKY PHOTODIODES

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