COMPARISON BETWEEN THE LEAKAGE DRAIN CURRENT BEHAVIOR IN SOI pMOSFETs and SOI nMOSFETs OPERATING AT 300℃

机译：在300℃下工作的SOI pMOSFET和SOI nMOSFET漏电流特性的比较

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In this paper we present a comparison between the leakage drain current mechanisms in Enhancement Mode SOI nMOSFETs and Accumulation Mode SOI pMOSFETs at 300℃. This comparison is applied for Accumulation and Enhancement Mode SOI MOSFETs for the back gate voltage grounded, where it will be analyzed the channel length influences in the leakage conduction mechanisms. Experimental and bidimensional simulations were used to support the analysis described in this work.

机译：在本文中，我们对增强模式SOI nMOSFET和累积模式SOI pMOSFET在300℃下的漏电流机制进行了比较。此比较适用于累积和增强模式SOI MOSFET，用于接地的背栅电压，其中将分析沟道长度对泄漏传导机制的影响。实验和二维模拟被用来支持这项工作中描述的分析。

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《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.87-94|共8页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
MARCELLO BELLODI; JOAO ANTONIO MARTINO;
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作者单位

Laboratorio de Sistemas Integraveis, Universidade de Sao Paulo, LSi / PSI / USP Av. Prof. Luciano Gualberto, trav. 3, 158, Cidade Universitaria, Sao Paulo, SP, Brazil;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Leakage Drain Current Behavior in an Accumulation Mode SOI p-Channel MOSFET Operating at High Temperatures [J] . M.Bellodiz, J.A.Martino Electrochemical and solid-state letters . 1999,第7期

机译：在高温下工作的累积模式SOI p沟道MOSFET的漏电流行为
2. Radiation-enhanced gate-induced-drain-leakage current in the 130 nm partially-depleted SOI pMOSFET [J] . Chao Peng, Zhiyuan Hu, Bingxu Ning, Solid-State Electronics . 2015,第apra期

机译：130 nm部分耗尽的SOI pMOSFET中的辐射增强型栅极感应的漏漏电流
3. Modeling of drain leakage current in SOI pMOSFETs [J] . Sheng-Lyang Jang, Hao-Hsun Lin Solid-State Electronics . 1999,第12期

机译：SOI pMOSFET的漏极泄漏电流建模
4. THE LEAKAGE DRAIN CURRENT BEHAVIOR IN GRADED-CHANNEL SOI nMOSFETs OPERATING UP TO 300℃ [C] . M. Bellodi, J. A. Martino 18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil . 2003

机译：梯度沟道SOI nMOSFET最高工作温度为300℃时的漏电流行为
5. Drain leakage and hot carrier reliability of SOI MOSFET's. [D] . Zhao, Xuejun (Eugene). 2000

机译：SOI MOSFET的漏极泄漏和热载流子可靠性。
6. Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress [O] . Yan Liu, Jiebin Niu, Hongjuan Wang, 2017

机译：通过外部单轴应力提高迁移率的SOI上的应变锗量子阱PMOSFET
7. A Comparison of Advanced Transport Models for the Computation of the Drain Current in Nanoscale nMOSFETs [O] . P. Palestri, C. Alex, A. Asenov, 2010

机译：用于计算纳米级nmOsFET中漏极电流的先进传输模型的比较
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COMPARISON BETWEEN THE LEAKAGE DRAIN CURRENT BEHAVIOR IN SOI pMOSFETs and SOI nMOSFETs OPERATING AT 300℃

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