Radiation-enhanced gate-induced-drain-leakage current in the 130 nm partially-depleted SOI pMOSFET

著录项

• 来源
  《Solid-State Electronics》 |2015年第4期|81-86|共6页
• 作者

  Chao Peng; Zhiyuan Hu; Bingxu Ning; Lihua Dai; Dawei Bi; Zhengxuan Zhang;

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• 作者单位

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Band-to-band tunneling; Gate-induced-drain-leakage; Partially-depleted silicon-on-insulator; Simulation; Total ionizing dose;

  机译：带间隧道门极引起的漏电泄漏;部分耗尽绝缘体上硅;模拟;总电离剂量;