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首页> 外文会议>18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil >IN-SITU AND ION IMPLANTATION NITROGEN DOPING ON NEAR STOICHIOMETRIC a-SIC:H FILMS
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IN-SITU AND ION IMPLANTATION NITROGEN DOPING ON NEAR STOICHIOMETRIC a-SIC:H FILMS

机译：在近化学计量a-SIC：H膜上原位和离子注入氮掺杂

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In this work we study the nitrogen n-type electrical doping of a-Si_(0.5)C_(0.5):H films obtained by plasma enhanced chemical vapor deposition (PECVD) utilizing and comparing two doping techniques: in-situ (during the material growth) and ion implantation technique. The in-situ doped a-SiC:H films were obtained adding different amounts of N_2 to the precursor gas mixture. For ion implantation four different nitrogen implanted concentrations were studied (between 10~(18) and 10~(21) atoms/cm~3) using multiple energies and doses to define an homogeneously doped layer. The doping experiments are carried out on a-SiC:H samples that present different structural order. The results show that high levels of electrical conductivity can be obtained with ion implantation technique. For in-situ technique the doping effect is also observed but must be improved in order to attain higher electrical conductivities. In the best case the room temperature dark conductivity for the sample implanted with 10~(21) nitrogens/cm~3 was ～10~(-7) (Ω.cm)~(-1) and the activation energy was 0.2 eV. For in-situ doping the electrical dark conductivity reached values near 10~(-10) (Ω.cm)~(-1) at high temperatures and the activation energy was ～0.6 eV. Despite of the apparent low values of the electrical conductivity, these results are promising because we are dealing with a wide gap material and the doping processes are still not optimized.
机译：在这项工作中，我们研究了通过等离子体增强化学气相沉积（PECVD）获得的a-Si_（0.5）C_（0.5）：H膜的氮n型电掺杂，并利用了两种掺杂技术进行了比较：原位（材料期间）生长）和离子注入技术。获得了将不同量的N_2添加到前驱气体混合物中的原位掺杂a-SiC：H薄膜。对于离子注入，研究了四种不同的氮注入浓度（在10〜（18）和10〜（21）原子/ cm〜3之间），使用了多种能量和剂量来定义均匀掺杂的层。掺杂实验在呈现不同结构顺序的a-SiC：H样品上进行。结果表明，利用离子注入技术可以获得高水平的电导率。对于原位技术，还可以观察到掺杂效果，但是必须提高掺杂效果才能获得更高的电导率。在最佳情况下，注入10〜（21）氮/ cm〜3的样品的室温暗电导率为〜10〜（-7）（Ω.cm）〜（-1），活化能为0.2 eV。对于原位掺杂，高温暗电导率达到接近10〜（-10）（Ω.cm）〜（-1）的值，活化能为〜0.6 eV。尽管电导率值很低，但这些结果还是有希望的，因为我们正在处理的是宽间隙材料，并且掺杂工艺仍未优化。

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