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ELECTROCHEMICAL PROCESS FOR SILICON TIPS FABRICATION

机译:硅尖端制造的电化学过程

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摘要

This work presents the results obtained for silicon microtips fabrication of pyramidal and conical shape. The tips are prepared using processes combination that applies porous silicon (PS) as sacrificial layer previously masked by hydrogen ion implantation (H~+ I.I.) and adequate thermal annealing. The shape of the tips is dependent on the mask geometry used by blocking anodization current where PS is not desired. After selective dissolution of PS with potassium hydroxide (KOH) at room temperature, tips are formed with height of 45 μm and 2-5 μm top diameter in square geometry or less than 0.1 micron with circular geometry.
机译:这项工作提出了金字塔形和圆锥形的硅微尖制造获得的结果。使用工艺组合制备尖端,该工艺组合将多孔硅(PS)用作牺牲层,该牺牲层先前已通过氢离子注入(H ++ I.I.)和适当的热退火掩蔽。尖端的形状取决于在不需要PS的情况下阻止阳极氧化电流所使用的掩模几何形状。在室温下用氢氧化钾(KOH)选择性溶解PS后,形成的尖端直径为45μm,顶部直径为2-5μm(正方形几何形状)或小于0.1微米(圆形几何形状)。

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