A STUDY ON (CO_(1-x)NI-xSI_2) SCHOTTKY CONTACTS ON N-SI(100) SUBSTRATES

机译：N-SI（100）基片上（CO_（1-x）NI-xSI_2）肖特基接触的研究

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The current ― voltage (Ⅰ-Ⅴ) characteristics of Co_(1-x)Ni_xSi_2 Schottky contacts on n-Si(100) have been systematically investigated. Results show that using optimized processing, nearly ideal Schottky barrier characteristics can be obtained at room temperature (RT). The RT Schottky barrier height (SBH) is about 0.63～0.65 eV and is not dependent on x. The annealing process has a significant effect on the electrical characteristics. For increased Ni concentration, high second annealing temperatures cause large leakage currents and high ideality factors. For Ni addition (x) larger than 33%, the annealing temperature should be kept below 700℃ to achieve good electrical characteristics. I-V-T measurements over a temperature range of 100K ? 300K show that the apparent SBH value of Co_(1-x)Ni_xSi_2 has a Gaussian distribution over the contact area.

机译：系统地研究了n-Si（100）上Co_（1-x）Ni_xSi_2肖特基接触的电流-电压（Ⅰ-Ⅴ）特性。结果表明，使用优化的工艺，可以在室温（RT）下获得接近理想的肖特基势垒特性。 RT肖特基势垒高度（SBH）约为0.63〜0.65 eV，与x无关。退火过程对电特性有重大影响。为了增加Ni的浓度，较高的第二退火温度会导致较大的漏电流和较高的理想因子。如果Ni添加量（x）大于33％，则退火温度应保持在700℃以下，以获得良好的电性能。在100K temperature温度范围内进行I-V-T测量300K表示Co_（1-x）Ni_xSi_2的表观SBH值在接触区域上具有高斯分布。

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来源
《1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China》|2001年|p.540-548|共9页
会议地点 Shanghai(CN);Shanghai(CN)
作者
Xin-Ping Qu; C. Detavernier; R. L. Van Meirhaeghe; F. Cardon; A. Lauwers; K. Maex; Bing-Zong Li;
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作者单位

Dept. of Solid State Science, Gent University, Krijgslaan 281/S1, B9000, Gent, Belgium;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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A STUDY ON (CO_(1-x)NI-xSI_2) SCHOTTKY CONTACTS ON N-SI(100) SUBSTRATES

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