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首页> 外文会议>1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China >FN-STRESS-INDUCED EXCESSIVE PRE-TUNNELING CURRENT IN THIN SiO_2 FILMS
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FN-STRESS-INDUCED EXCESSIVE PRE-TUNNELING CURRENT IN THIN SiO_2 FILMS

机译：FN应力引起的薄SiO_2薄膜过隧穿电流

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摘要

The excessive pre-tunneling current induced by FN stress in thin films has been observed in three distinct regions. In the low-voltage (0～1.0 V) region Ⅰ, a stress-induced negative-differential-resistance (NDR) peak presents in the positive Ⅰ-Ⅴ measurement, and the NDR current appears to be a transient in nature. In the intermediate-voltage (1.0～3.5V) region Ⅱ, transient excessive current was detected if the polarity of the measurement voltage was opposite to that of the stress voltage. In the high-voltage (>3.5 eV) region Ⅲ, in addition to the transient component, a DC component was observed. The NDR peak is attributed to the discharge of the trapped states in the gate/oxide interface. The transient current in Regions Ⅱ and Ⅲ come from the discharge of the charged oxide traps adjacent to the electrodes for the stress voltage. The DC component was attributed to the trap-assisted tunneling through the neutral electron oxide traps.
机译：在三个不同的区域中，观察到了由FN应力在薄膜中引起的过大的预隧道电流。在低压（0〜1.0 V）Ⅰ区，正Ⅰ-Ⅴ度测量出现一个应力诱导的负微分电阻（NDR）峰，而NDR电流在本质上似乎是瞬态的。在中压（1.0〜3.5V）Ⅱ区，如果测量电压的极性与应力电压的极性相反，则检测到瞬态过电流。在高压（> 3.5 eV）区域Ⅲ中，除了瞬态分量外，还观察到DC分量。 NDR峰值归因于栅极/氧化物界面中陷阱态的放电。区域Ⅱ和Ⅲ中的瞬态电流来自与电极相邻的带电氧化物陷阱的放电，以获取应力电压。直流分量归因于通过中性电子氧化物陷阱的陷阱辅助隧穿。

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