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首页> 外文期刊>Japanese journal of applied physics >State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO_2 Films in a Metal-Oxide-Silicon Structure
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State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO_2 Films in a Metal-Oxide-Silicon Structure

机译:金属氧化物-硅结构中SiO_2薄膜应力引起的漏电流中引起随机电报噪声波动的缺陷的状态转变

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摘要

Dynamic fluctuation in stress-induced leakage current-called "variable stress-induced leakage current"-in a gate oxide of a metal-oxide-semiconductor structure was investigated. Variable stress-induced leakage current is attributed to random telegraph noise, which is associated with the state-transition of a single defect. To analyze the mechanism of the state-transition, dependence of state-transition probabilities on gate current and on temperature were investigated. These dependences indicate that the state-transition mechanism is a defect-structure transition by charge collision.
机译:研究了金属氧化物半导体结构的栅极氧化物中应力引起的泄漏电流的动态波动,称为“可变应力引起的泄漏电流”。应力引起的可变泄漏电流归因于随机电报噪声,这与单个缺陷的状态转变有关。为了分析状态转变的机理,研究了状态转变概率对栅极电流和温度的依赖性。这些依赖性表明状态转变机制是电荷碰撞引起的缺陷结构转变。

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  • 来源
    《Japanese journal of applied physics》 |2013年第11issue1期|110203.1-110203.4|共4页
  • 作者单位

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan,Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan;

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan,Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;

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