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首页> 外文会议>1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China >INTEGRATION OF CU AND LOW-K MATERIAL FOR DUAL-DAMASCENE PROCESS
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INTEGRATION OF CU AND LOW-K MATERIAL FOR DUAL-DAMASCENE PROCESS

机译：铜和低介电常数材料的集成

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摘要

This paper discusses the integration of Cu and low-k material, including organic spin-on polymer and carbon-doped oxide deposited by chemical vapor deposition (CVD) for low RC dual-damascene interconnect. The issues we have addressed include the interaction of DUV photoresist and low-k material and defects of Cu lines. Methods of UV treatment and oxygen anneal have been developed to modify low-k material for eliminating its interaction with photoresist and patterning of dual damascene is thus realized. Following damascene patterning, Cu was filled and planarized. We found that, after chemical mechanical polish (CMP), Cu defects reduced as the thermal budget of Cu annealing was lowered. However, Cu annealed under low thermal budget presents unstable nature and Cu hillocks form in subsequent higher temperature steps. Thus, the integration processes, including inter-metal-dielectric (IMD) deposition, Cu anneal, and Cu CMP, have to been optimized to retain Cu integrity. Through the optimization of various modules, an 8-level Cu/low-k damascene is demonstrated.
机译：本文讨论了铜和低k材料的集成，包括有机旋涂聚合物和通过化学气相沉积（CVD）沉积的碳掺杂氧化物，以实现低RC双大马士革互连。我们解决的问题包括DUV光刻胶与低k材料的相互作用以及Cu线的缺陷。已经开发了UV处理和氧退火的方法以改性低k材料，以消除其与光致抗蚀剂的相互作用，从而实现了双镶嵌的图案化。在镶嵌图案之后，将Cu填充并平坦化。我们发现，在化学机械抛光（CMP）之后，随着铜退火的热预算降低，铜缺陷减少。然而，在低热预算下退火的铜表现出不稳定的性质，并且在随后的较高温度步骤中形成铜小丘。因此，必须优化包括金属间电介质（IMD）沉积，Cu退火和Cu CMP在内的集成工艺，以保持Cu完整性。通过优化各种模块，展示了8级Cu / low-k镶嵌。

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