FORMATION AND INHIBITION MECHANISM OF DEFECTS IN THE SURFACE RANGE OF SILICON WAFER

机译：硅晶片表面范围内缺陷的形成和抑制机理

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The surface defects both on N-type silicon and P-type (111) silicon wafers were investigated. The formation of the surface defects can efficiently be inhibited by utilizing the technology of neutron-irradiation. Some irradiated defects were induced into Czochralski silicon by fast neutron irradiation, they interact with interstitial oxygen in Czochralski silicon during high temperature annealing, In this paper, the formation and inhibition mechanism of these surface defects have been discussed.

机译：研究了N型硅和P型（111）硅晶片上的表面缺陷。利用中子辐照技术可以有效地抑制表面缺陷的形成。快速中子辐照将一些辐照缺陷引入了直拉硅中，它们在高温退火过程中与直拉硅中的间隙氧相互作用，本文探讨了这些表面缺陷的形成和抑制机理。

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来源
《1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China》|2001年|p.298-301|共4页
会议地点 Shanghai(CN);Shanghai(CN)
作者
Y.X.Li; C.C.Liu; Y.S.Xu; X.Wang; Y.X.Yu; Q.Y.Hao; B.Y.Ren; D.R.Yang; D.L.Que;
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作者单位

School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, P.R.China;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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4. FORMATION AND INHIBITION MECHANISM OF DEFECTS IN THE SURFACE RANGE OF SILICON WAFER [C] . Y.X.Li, C.C.Liu, Y.S.Xu, International conference on semiconductor technology . 2001

机译：硅晶片表面范围内缺陷的形成和抑制机制
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FORMATION AND INHIBITION MECHANISM OF DEFECTS IN THE SURFACE RANGE OF SILICON WAFER

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