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首页> 外文会议>1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China >GATE DIELECTRIC THICKNESS CONTROL FOR HIGH-K AND CONVENTIONAL GATE STACKS IN THE PRESENCE OF CHEMICAL OXIDES FROM PRE-GATE CLEAN PROCESSES FOR SUB-180 nm MOSFET APPLICATIONS
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GATE DIELECTRIC THICKNESS CONTROL FOR HIGH-K AND CONVENTIONAL GATE STACKS IN THE PRESENCE OF CHEMICAL OXIDES FROM PRE-GATE CLEAN PROCESSES FOR SUB-180 nm MOSFET APPLICATIONS

机译：小于180 nm MOSFET应用的预栅极清洁过程中存在的化学氧化物时，高K和常规栅极堆叠的栅极介电厚度控制

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摘要

The thickness control for the gate dielectric with an equivalent oxide thickness (EOT) < 2.5 nm is believed to be very sensitive to the preexisting chemical oxides generated from pre-gate clean processes. Wet chemistry cleaning processes normally used prior to gate oxidation can result in the growth of chemical oxides of up to 1.5 nm as measured by ellipsometry. These chemical oxides have been conceived to appreciably influence the electrical thickness of the subsequently prepared gate dielectric. The issue is of particular concern for sub-180 nm MOSFET requiring gate oxides of less than 2.5 nm for conventional oxide - poly Si gate stacks, and minimal interfacial oxides for deposited high-K dielectric gate stacks for sub-100 nm technologies. In this study, the effect of various pre-gate clean strategies that generated chemical oxides of up to 1.2 nm on the electrical thickness of conventional gate oxides and the physical thickness of deposited high-K gate dielectric ZrO_2 was systematically studied. It was found that the impact of chemical oxides on the thickness of thermally grown ultrathin gate oxides as well as ZrO_2 based high-K gate stacks was far less significant than previously conceived.
机译：等效氧化物厚度（EOT）<2.5 nm的栅极电介质的厚度控制被认为对由栅极前清洁工艺产生的预先存在的化学氧化物非常敏感。通常在栅极氧化之前使用的湿法化学清洁工艺会导致通过椭圆偏振光度法测量的化学氧化物的生长高达1.5 nm。这些化学氧化物被认为可显着影响随后制备的栅极电介质的电厚度。对于低于180 nm的MOSFET，对于常规氧化物-多晶硅栅极叠层需要小于2.5 nm的栅极氧化物，而对于低于100 nm的技术所沉积的高K介电栅极叠层则需要最少的界面氧化物，这一问题尤其引起关注。在这项研究中，系统地研究了产生高达1.2 nm的化学氧化物的各种前栅极清洁策略对常规栅极氧化物的电厚度和沉积的高K栅极电介质ZrO_2的物理厚度的影响。发现化学氧化物对热生长的超薄栅极氧化物以及基于ZrO_2的高K栅极叠层厚度的影响远不如先前设想的重要。

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