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首页> 外文会议>The 2001 ASME International Mechanical Engineering Congress and Exposition, 2001, Nov 11-16, 2001, New York, New York >AN ASSESSMENT OF THE IMPACT OF INTERCONNECT STRATEGIES ON THERMAL PERFORMANCE OF GaAs POWER AMPLIFIER IC DEVICES
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AN ASSESSMENT OF THE IMPACT OF INTERCONNECT STRATEGIES ON THERMAL PERFORMANCE OF GaAs POWER AMPLIFIER IC DEVICES

机译：互连策略对GaAs功率放大器IC设备热性能的影响评估

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摘要

Alternative interconnect strategies are being considered in place of the standard wire bond interconnect for GaAs power amplifier MMIC devices due to cost and electrical performance improvements. The package/die thermal performance consequences are potentially high-risk issue to these interconnect strategies and requires evaluation. Thermal simulations are conducted to compare and evaluate the thermal performances of three interconnect strategies: wire bond, gold post-flip chip, and through via interconnects. The test vehicle simulated is a three-stage, dual band power amplifier integrated circuit dissipating approximately 5 W steady-state power. Parametric studies are conducted to evaluate the impact of the printed circuit board, die thickness, solid gold vias, and design enhancements on package thermal performance. Best thermal performance is provided by a wire bonded, thin GaAs die attached with solder die attach to a printed circuit board that maximizes the number of plated-through-holes directly under the die. This configuration results in a best case junction-to-heat sink thermal resistance of 12 ℃/W. Optimum flip chip and through via designs result in degraded thermal performance compared to the above described wire bond design but may have acceptable thermal performance. For these simulations, predicted junction-to-heatsink thermal resistance is in a range of 15-20 ℃/W and is better than a comparable wire bonded design that uses a conductive epoxy die attach material.
机译：由于成本和电气性能的改进，正在考虑使用替代的互连策略来代替用于GaAs功率放大器MMIC器件的标准引线键合互连。封装/芯片的热性能后果可能是这些互连策略的潜在高风险问题，需要评估。进行热仿真以比较和评估三种互连策略的热性能：引线键合，金后翻转芯片和直通互连。模拟的测试车辆是一个三级，双频带功率放大器集成电路，其功耗约为5 W稳态功率。进行了参数研究，以评估印刷电路板，芯片厚度，纯金通孔和设计增强对封装热性能的影响。引线键合的薄砷化镓（GaAs）裸片通过焊接裸片附着到印刷电路板上，从而提供了最佳的热性能，从而最大程度地增加了裸片正下方的镀通孔数量。这种配置在最佳情况下结到散热器的热阻为12℃/ W。与上述引线键合设计相比，最佳的倒装芯片和直通孔设计会导致热性能下降，但可能具有可接受的热性能。对于这些仿真，预计结至散热器的热阻在15-20℃/ W的范围内，并且比使用导电性环氧树脂芯片附着材料的类似引线键合设计更好。

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