Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates

机译：ZnO纳米线在硅，蓝宝石和GaN衬底上的生长特性

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

ZnO nanowires have been grown on (001) silicon, c-sapphire and micro-patterned (0001) GaN substrates, which are characterized by scanning electron microscopy, x-ray diffraction, and photoluminescence. It is shown that the crystallinity of the nanowires sensitively depends on the types of the substrates. The ZnO nanowires have good optical and structural properties.

机译：ZnO纳米线已在（001）硅，c蓝宝石和微图案化（0001）GaN衬底上生长，这些衬底的特征在于扫描电子显微镜，x射线衍射和光致发光。结果表明，纳米线的结晶度敏感地取决于基底的类型。 ZnO纳米线具有良好的光学和结构特性。

著录项

来源
《2003 International Symposium on Compound Semiconductors Aug 25-27, 2003 San Diego, CA》|2003年|p.121-122|共2页
会议地点 San Diego CA(US);San Diego CA(US)
作者
Hyun-Gi Hong; Tae-Yeon Seong; Seonghoon Lee;
展开▼
作者单位

Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Gwangju 500-712, Korea;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Catalyst-free thermally-evaporated growth and optical properties of ZnO nanowires on Si, GaN and sapphire substrates [J] . Tran Van Khai, Dong Sub Kwak, Yong Jung Kwon, Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2013,第2期

机译：Si，GaN和蓝宝石衬底上ZnO纳米线的无催化剂热蒸发生长和光学性质
2. Growth habits and defects in ZnO nanowires grown on GaN/sapphire substrates [J] . Igor Levin, Albert Davydov, Babak Nikoobakht, Applied Physics Letters . 2005,第10期

机译：在GaN /蓝宝石衬底上生长的ZnO纳米线的生长习惯和缺陷
3. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical liftoff and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire [J] . S. Gautier, T. Moudakir, G. Patriarche, Journal of Crystal Growth . 2013,第maya1期

机译：使用化学剥离和室温直接晶片键合以及GaN晶片规模在ZnO缓冲蓝宝石上进行GaN晶片规模的MOVPE生长，从蓝宝石转移到玻璃基板的MOVPE GaN薄膜的结构和成分表征
4. Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates [C] . Hyun-Gi Hong, Tae-Yeon Seong, Seonghoon Lee . 2003

机译：ZnO纳米线在硅，蓝宝石和GaN衬底上的生长特性
5. Cellular response of one-dimensional silicon nanowires and the effect of etching silicon (111) substrates with hydrofluoric acid prior to nanowire growth. [D] . Tanaudommongkon, Asama. 2009

机译：一维硅纳米线的细胞响应以及在纳米线生长之前用氢氟酸蚀刻硅（111）基板的效果。
6. Toward the Growth of Self-Catalyzed ZnO Nanowires Perpendicular to the Surface of Silicon and Glass Substrates by Pulsed Laser Deposition [O] . Basma ElZein, Yingbang Yao, Ahmad S. Barham, 2020

机译：通过脉冲激光沉积朝向垂直于硅和玻璃基板表面的自催化ZnO纳米线的生长
7. Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates [O] . Alexander Shkurmanov, Chris Sturm, Jörg Lenzner, 2016

机译：通过pLD在图案化的蓝宝石衬底上选择性生长倾斜的ZnO纳米针和纳米线
8. High Quality AIN And GaN Epilayers Grown On (00-1) Sapphire, (100), and (111)Silicon Substrates [R] . Kung, P., Saxler, A., Zhang, X., 1995

机译：在（00-1）蓝宝石，（100）和（111）硅衬底上生长的高质量aIN和GaN外延层

Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates

摘要

著录项

相似文献

相关主题

期刊订阅