Field effect and localization in InGaN/GaN quantum wells

机译：InGaN / GaN量子阱中的场效应和局部化

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we have performed time-delayed CL spectroscopy on single GaN/In_(0.13)Ga_(0.87)N/GaN quantum wells with and d= 6 nm and 8 nm. Using the onset portion of the time delayed spectra we find that both localization in potential fluctuations and band tilting due to fields have an effect on the recombination in our specimens. For d= 6 nm the localization effects are dominant whereas for d = 8 nm field effects are dominant. This work was supported by a grant from Nichia Corporation. Fruitful discussions with Prof. Juergen Christen are gratefully acknowledged.

机译：我们在d = 6 nm和8 nm的单个GaN / In_（0.13）Ga_（0.87）N / GaN量子阱上进行了时滞CL光谱分析。使用时间延迟谱的开始部分，我们发现电位波动的局部化和由于电场引起的谱带倾斜都会影响样本中的重组。对于d = 6 nm，定位效应占主导，而对于d = 8 nm，场效应占主导。这项工作得到了Nichia Corporation的资助。非常感谢与Juergen Christen教授进行的富有成果的讨论。

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来源
《2003 International Symposium on Compound Semiconductors Aug 25-27, 2003 San Diego, CA》|2003年|p.6-7|共2页
会议地点 San Diego CA(US);San Diego CA(US)
作者
A. Bell; F. A. Ponce; H. Marui; S. Tanaka;
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作者单位

Dept. Physics and Astronomy, Arizona State University, Tempe, AZ, 85287-1504;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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