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A quantum mechanical correction of classical surface potential model of MOS inversion layer

机译:MOS反型层经典表面电势模型的量子力学校正

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摘要

In this paper, an analyse of variational wave function approach corrections of classical surface potential model of MOS inversion layer is presented. These solutions are based on smoothing functions and parameters. In this way an explicit surface potential versus gate voltage relations in the case of strong inversion in semiconductor is derived. Results of these models are compared with results obtained by the numerical solver of coupled Poisson-Schrodinger equations.
机译:本文对MOS反型层经典表面势模型的变分波函数方法校正进行了分析。这些解决方案基于平滑功能和参数。以这种方式,得出了在半导体中强烈反转的情况下明显的表面电势与栅极电压的关系。将这些模型的结果与耦合的Poisson-Schrodinger方程的数值求解器获得的结果进行比较。

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