Electrical measurements in nanotechnology using single electron bipolar avalanche transistors

机译：使用单电子双极雪崩晶体管的纳米技术中的电学测量

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Based on a simple model, we estimate that a nonoscopic device consisting of a low-conductivity material, such as biological tissue, may have resistances higher than 100GΩ. Such a device must be characterized with currents smaller than 1pA. Small currents can be measured by counting single electrons. In this paper, we estimate some physical limits related to such current measurements. Then we propose a system for electrical measurements of high resistance nano-devices based on the single electron bipolar avalanche transistor (SEBAT). The system functions as a source-measure-unit, at room temperature, at the currents from an atto-ampere to pico-amperes, and with high resolution.

机译：根据一个简单的模型，我们估计由低电导率材料（例如生物组织）组成的非视觉设备的电阻可能会高于100GΩ。此类设备必须具有小于1pA的电流。小电流可以通过计数单个电子来测量。在本文中，我们估计了与此类电流测量相关的一些物理极限。然后，我们提出了一种基于单电子双极雪崩晶体管（SEBAT）的高阻纳米器件电学测量系统。该系统在室温下，从atto安培到pica安培的电流下均具有高分辨率，可作为源测量单元。

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来源
《2010 27th International Conference on Microelectronics Proceedings》|2010年|p.51-56|共6页
会议地点 Nis(RS);Nis(RS)
作者
Popovic Radivoje S.; Lany Marc;
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Microsystems Laboratory 3, Swiss Federal Institute of Technology Lausanne (EPFL), Station 17, 1015 Lausanne, Switzerland;

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正文语种 eng
中图分类微模组件;
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1. A single electron bipolar avalanche transistor implemented in 90 nm CMOS [J] . Eric A.G. Webster, Justin A. Richardson, Lindsay A. Grant, Solid-State Electronics . 2012,第期

机译：在90 nm CMOS中实现的单电子双极雪崩晶体管
2. Single-pulse observation of photoemission during avalanche breakdown in insulated gate bipolar transistor [J] . Endo Koichi, Chinone Norimichi, Nakamura Tomonori, Microelectronics & Reliability . 2020,第Nova期

机译：绝缘栅双极晶体管雪崩击穿期间光扫描的单脉冲观察
3. Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors [J] . Flitcroft R.M., David J.P.R. IEEE Transactions on Electron Devices . 1998,第6期

机译：GaInP / GaAs单异质结双极晶体管中的雪崩倍增
4. Electrical Measurements in Nanotechnology Using Single Electron Bipolar Avalanche Transistors [C] . Radivoje S. Popovic, Marc Lany International Conference on Microelectronics . 2010

机译：使用单电子双极雪崩晶体管纳米技术的电气测量
5. Towards single shot measurements of a Cooper pair box qubit using an rf single electron transistor. [D] . Sanchez, Carlos A. 2005

机译：使用RF单电子晶体管对Cooper对盒量子位进行单次测量。
6. Measurement of finite-frequency current statistics in a single-electron transistor [O] . Niels Ubbelohde, Christian Fricke, Christian Flindt, -1

机译：单电子晶体管中有限频率电流统计的测量
7. Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor [O] . Curry, M. J., England, T. D., Bishop, N. C., 2015

机译：使用a的单电子晶体管的低温预放大硅锗异质结双极晶体管

Electrical measurements in nanotechnology using single electron bipolar avalanche transistors

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