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Tuned dual beam low voltage RF MEMS capacitive switches for X-band applications

机译:用于X波段应用的调谐双束低压RF MEMS电容开关

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This paper presents a low voltage, low loss tuned RF MEMS (Radio Frequency Micro Electro Mechanical Systems) capacitive shunt switches for use in X-band. The tunable switch is designed using two shunt beams with meander springs. The switch achieved low actuation voltage along with small up state capacitance. Simulation using CoventorWare shows the actuation voltage as 7.5 Volts and up state capacitance of 47fF. HFSS simulation reveals the insertion loss in the range of (0.1–0.2) dB and up state return loss better than −25 dB in the X-band (8–12 GHz). The switch offers down state isolation of 60 dB at 12 GHz and is better than 40 dB in the frequency range 8–25 GHz.
机译:本文介绍了一种用于X波段的低电压,低损耗调谐RF MEMS(射频微机电系统)电容式并联开关。可调开关设计为使用两个带曲折弹簧的分流梁。开关实现了较低的启动电压以及较小的上态电容。使用CoventorWare进行的仿真显示,启动电压为7.5伏,向上状态电容为47fF。 HFSS仿真揭示了在(0.1–0.2)dB范围内的插入损耗和在X频段(8–12 GHz)中优于-25 dB的上态回波损耗。该开关在12 GHz时提供60 dB的向下状态隔离,并且在8–25 GHz频率范围内优于40 dB。

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