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首页> 外文会议>2012 38th IEEE Photovoltaic Specialists Conference. >In-situ determination of silane gas utilization and deposition rate for different deposition regimes of μc-Si:H using FTIR and OES in-situ
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In-situ determination of silane gas utilization and deposition rate for different deposition regimes of μc-Si:H using FTIR and OES in-situ

机译：使用FTIR和OES原位确定μc-Si：H不同沉积方式的硅烷气体利用率和沉积速率

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摘要

For the deposition of microcrystalline silicon it is important to increase the deposition rate and silane utilization rate. In the past, a method based on optical emission spectroscopy (OES) has been introduced to obtain the transition point from amorphous to crystalline growth in-situ, which is the point for optimum microcrystalline silicon solar cell conditions. The method is based on alternating deposition by a silane/hydrogen plasma and etching by a pure hydrogen plasma. This paper combines OES with Fourier transform infrared (FTIR) spectroscopy in the exhaust line to determine the growth rate in-situ. In this way, the multidimensional space of silane flow, deposition rate and gas utilization rate is determined in-situ in one deposition. It is aimed to increase the gas utilization rate towards 100%.
机译：对于微晶硅的沉积，重要的是提高沉积速率和硅烷利用率。过去，已经引入了一种基于光发射光谱（OES）的方法来获得从非晶到原位生长的过渡点，这是最佳微晶硅太阳能电池条件的关键。该方法基于通过硅烷/氢等离子体的交替沉积和通过纯氢等离子体的蚀刻。本文将OES与排气管线中的傅立叶变换红外（FTIR）光谱相结合，以确定原位生长速率。以此方式，一次沉积中就地确定了硅烷流量，沉积速率和气体利用率的多维空间。目的是将气体利用率提高到100％。

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