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High-uniformity waveguide-integrated metal-semiconductor-metal germanium photodetector with sige capping layer and its application to differential receivers

机译：具有均匀覆盖层的高均匀度波导集成金属-半导体-金属锗光电探测器及其在差分接收机中的应用

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Differential pairs of metal-semiconductor-metal (MSM) germanium (Ge) photodetectors (PDs) with an epitaxially-tuned silicon germanium (SiGe) capping layer are fabricated. PDs with high responsivity (1.0 A/W) and low dark current (33 mA/cm²) are obtained, and low-noise characteristics and 10 Gbps data transmission is confirmed in the differential MSM PDs.

机译：制作了具有外延调谐的硅锗（SiGe）覆盖层的金属-半导体-金属（MSM）锗（Ge）光电探测器（PD）的差分对。获得了具有高响应度（1.0 A / W）和低暗电流（33 mA / cm ^{2 ）的PD，并在差分MSM PD中确定了低噪声特性和10 Gbps数据传输。}

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来源
《2012 IEEE 9th International Conference on Group IV Photonics.》|2012年|p.231- 233|共3页
会议地点 San Diego CA(US)
作者
Miura Makoto; Fujikata Junichi; Noguchi Masataka; Okamoto Daisuke; Horikawa Tsuyoshi; Arakawa Yasuhiko;
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Institute for Photonics-Electronics Convergence System Technology (PECST), Japan;

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正文语种 eng
中图分类材料;
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专利

1. Si Waveguide-Integrated Metal-Semiconductor-Metal and p-i-n-Type Ge Photodiodes Using Si-Capping Layer [J] . Junichi Fujikata, Makoto Miura, Masataka Noguchi, Japanese journal of applied physics . 2013,第4Issue2期

机译：使用硅覆盖层的硅波导集成金属半导体金属和p-i-n型Ge光电二极管
2. InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-${rm Ga}_{2}{rm O}_{3}$ Cap Layers [J] . Zheng-Da Huang, Wen-Yin Weng, Shoou-Jinn Chang, Sensors Journal, IEEE . 2013,第4期

机译：具有Beta- <分子式的InGaN / GaN多量子阱金属半导体金属光电探测器Formulatype =“ inline”> $ {rm Ga} _ {2} {rm O} _ {3} $ < / tex> 盖层
3. InGaN Metal-Semiconductor-Metal Photodetectors With Aluminum Nitride Cap Layers [J] . Lee K.-H., Chang P.-C., Chang S.-J., Quantum Electronics, IEEE Journal of . 2011,第8期

机译：具有氮化铝盖层的InGaN金属-半导体-金属光电探测器
4. High-uniformity waveguide-integrated metal-semiconductor-metal germanium photodetector with sige capping layer and its application to differential receivers [C] . Miura Makoto, Fujikata Junichi, Noguchi Masataka, IEEE International Conference on Group IV Photonics . 2012

机译：具有SiGe覆盖层的高均匀波导 - 集成金属 - 半导体 - 金属锗光电探测器及其在差示接收器中的应用
5. Metal-semiconductor-metal photodetectors for optoelectric receiver applications. [D] . Seo, Jong-Wook. 1993

机译：用于光电接收器应用的金属半导体金属光电探测器。
6. Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications [O] . Soumava Ghosh, Kuan-Chih Lin, Cheng-Hsun Tsai, 2020

机译：用于短波红外应用的金属半导体金属GESN光电探测器
7. High-bandwidth and high-responsivity waveguide-integrated plasmonic germanium photodetector [O] . Jacek Gosciniak, Mahmoud Rasras 2019

机译：高带宽和高响应性波导集成的等离子体光电探测器

High-uniformity waveguide-integrated metal-semiconductor-metal germanium photodetector with sige capping layer and its application to differential receivers

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