首页> 外国专利> Multijunction solar cell useful in satellite and other space related applications, comprises substrate, solar cells, germanium silicon tin buffer layer, germanium silicon tin back surface field layer, and germanium silicon tin window layer

Multijunction solar cell useful in satellite and other space related applications, comprises substrate, solar cells, germanium silicon tin buffer layer, germanium silicon tin back surface field layer, and germanium silicon tin window layer

机译：可用于卫星和其他与空间有关的应用中的多结太阳能电池，包括基板，太阳能电池，锗硅锡缓冲层，锗硅锡背面场层和锗硅锡窗口层

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摘要

The multijunction solar cell comprises a substrate (301), a first solar subcell disposed over the substrate and having a first band gap, a second solar subcell disposed over the first solar subcell having a second band gap greater than the first band gap and lattice matched to the first solar subcell, a third solar subcell disposed over the second solar subcell having a third band gap greater than the second band gap and lattice matched with respect to the second subcell, and a germanium silicon tin buffer layer (303) deposited over the substrate. The multijunction solar cell comprises a substrate (301), a first solar subcell disposed over the substrate and having a first band gap, a second solar subcell disposed over the first solar subcell having a second band gap greater than the first band gap and lattice matched to the first solar subcell, a third solar subcell disposed over the second solar subcell having a third band gap greater than the second band gap and lattice matched with respect to the second subcell, a germanium silicon tin buffer layer (303) deposited over the substrate, a germanium silicon tin back surface field layer (304) deposited over the buffer layer, a germanium silicon tin window layer deposited over the first solar subcell, and a tunnel diode disposed over the first solar subcell. The first solar subcell has a band gap of 0.9 eV. The second solar subcell has a band gap of 1.35 eV. The third solar subcell has a band gap of 1.75 eV. The solar cell further comprises a bottom solar subcell composed of germanium silicon tin having a first band gap of 0.7-1.2 eV, middle solar subcells disposed over the bottom solar subcell each having a band gap of 1-2.4 eV, greater than the first band gap and lattice matched to the bottom solar subcell, and a top solar subcell disposed over the middle solar subcells and having a third band gap of 1.6-2.4 eV, which is greater than the band gap the uppermost middle solar subcell and lattice matched with respect to the middle subcells.

机译：所述多结太阳能电池包括衬底（301），设置在所述衬底上方并具有第一带隙的第一太阳能子电池，设置在所述第一太阳能子电池上方的第二太阳能子电池具有大于所述第一带隙的第二带隙并且晶格匹配。相对于第一太阳能子电池，布置在第二太阳能子电池上方的第三太阳能子电池具有大于第二带隙的第三带隙并且相对于第二子电池晶格匹配，并且锗硅锡缓冲层（303）沉积在第一太阳能子电池上。基质。所述多结太阳能电池包括衬底（301），设置在所述衬底上方并具有第一带隙的第一太阳能子电池，设置在所述第一太阳能子电池上方的第二太阳能子电池具有大于所述第一带隙的第二带隙并且晶格匹配。对于第一太阳能子电池，设置在第二太阳能子电池上方的第三太阳能子电池具有大于第二带隙的第三带隙并且相对于第二子电池晶格匹配，在衬底上方沉积锗硅锡缓冲层（303）沉积在缓冲层上方的锗硅锡背面场层（304），沉积在第一太阳能子电池上方的锗硅锡窗口层以及设置在第一太阳能子电池上方的隧道二极管。第一太阳能子电池具有0.9eV的带隙。第二太阳能子电池具有1.35eV的带隙。第三太阳能子电池具有1.75eV的带隙。该太阳能电池还包括由锗硅锡组成的底部太阳能子电池，其具有第一带隙为0.7-1.2 eV，设置在底部太阳能子电池上的中间太阳能子电池均具有大于第一带隙的1-2.4 eV的带隙。间隙和晶格与底部太阳能子电池匹配，并且顶部太阳能子电池设置在中间太阳能子电池上方，并且具有1.6-2.4 eV的第三带隙，该第三带隙大于最上方的中间太阳能子电池和相对于晶格匹配的带隙到中间的子单元。

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公开/公告号DE102010010880A1

专利类型
公开/公告日2011-09-15

原文格式PDF
申请/专利权人 EMCORE CORP.;
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申请/专利号DE20101010880
发明设计人 NEWMAN FRED;SHARPS PAUL;
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申请日2010-03-10
分类号H01L31/18;H01L31/06;
国家 DE
入库时间 2022-08-21 17:47:20

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