首页> 外文会议>Symposium on amorphous and microcrystalline silicon technology >Microcrystalline silicon-germanium alloys for absorpton layers in htin film solar cells
【24h】

Microcrystalline silicon-germanium alloys for absorpton layers in htin film solar cells

机译:用于薄膜太阳能电池吸收层的微晶硅锗合金

获取原文

摘要

Thin microcystaliline silicon-germanium films (uc-Si_1-xGe_x:H) prepared by PECVD at 95 MHz have bene investigated.The opticla absorption of these films increases in the ninfrared spectral region with increasing germanium conetnet.In additin to the shift of the indicect gap an increase of the absorption coefficient above th band edge is observed.The material shows high crystallinity and exhibits good structural quality similar to pure uc-Si:H films.
机译:研究了通过PECVD在95 MHz处制备的微囊藻碱硅锗薄膜(uc-Si_1-xGe_x:H),这些薄膜的光学吸收率随锗素的增加而在红外光谱区增加。与纯uc-Si:H薄膜相似,这种材料显示出高结晶度并具有良好的结构质量。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号