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首页> 外文期刊>International Journal of Photoenergy >Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells
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Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

机译：用于提高硅基薄膜太阳能电池中长波吸收的氢化微晶硅锗合金的开发

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Hydrogenated microcrystalline silicon-germanium (mu c-Si1-xGex:H) alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (R-GeH4) and the hydrogen ratio (R-H2) on the mu c-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and mu c-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in mu c-Si1-xGex:H. Moreover, a higher R-H2 significantly promoted Ge incorporation for a-Si1-xGex: H, while the Ge content was not affected by R-H2 in mu c-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 mu m thick absorbers with a similar crystalline volume fraction were applied. With the increasing R-GeH4, the accompanied increase in Ge content of mu c-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of R-H2 and R-GeH4, the single-junction mu c-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to mu c-Si:H cell, the external quantum efficiency at 800nm had a relative increase by 33.1%.
机译：氢化微晶硅锗（mu c-Si1-xGex：H）合金被开发用于硅基薄膜太阳能电池。研究了锗烷浓度（R-GeH4）和氢比（R-H2）对mu c-Si1-xGex：H合金和相应的单结薄膜太阳能电池的影响。还比较了a-Si1-xGex：H和mu c-Si1-xGex：H中Ge掺入的行为。类似于a-Si1-xGex：H，在μc-Si1-xGex：H中观察到优先的Ge掺入。此外，较高的R-H2显着促进了α-Si1-xGex：H的Ge掺入，而μc-Si1-xGex：H的生长中Ge含量不受R-H2的影响。此外，为了消除结晶作用，使用了具有相似的晶体体积分数的0.9μm厚的吸收剂。随着R-GeH4的增加，mu c-Si1-xGex：H的Ge含量随之增加，从而使带隙变窄，并显着增强了长波吸收。然而，依赖于偏压的EQE测量结果表明，吸收剂中掺入过多的Ge会降低载流子收集和电池性能。通过优化R-H2和R-GeH4，单结mu c-Si1-xGex：H电池实现了5.48％的效率，对应于50.5％的晶体体积分数和13.2 at。％的Ge含量。与μc-Si：H电池相比，在800nm处的外部量子效率相对提高了33.1％。

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