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Silicon germanium virtual substrate growth and silicon(1-y)germanium(y)/silicon(1-x)germanium(x)/silicon(1-y)germanium(y) HBTs for millimeter-wave applications.

机译：用于毫米波应用的硅锗虚拟衬底生长和硅（1-y）锗（y）/硅（1-x）锗（x）/硅（1-y）锗（y）HBT。

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Recently, relaxed SiGe virtual substrate on Si wafer attracted a lot of interests due to potential applications in devices like strain-Si HEMT, MOSFET, etc and the ability for integration with CMOS. In this work, two methods for the growth of SiGe virtual substrate are studied: compliant substrate and low temperature (LT) Si buffer.; Borosilicate glass compliant substrate is fabricated by boron and oxygen implantation into SOI wafer and high temperature annealing. The 20% BSG substrate is demonstrated to be a very effective compliant substrate to grow high quality SiGe film with 0.3 Ge content.; The growth of SiGe films on LT Si buffer has been studied in detail. Crystal quality of the SiGe film is improved by optimizing growth conditions of the LT Si buffer layer. The strain compliant effect of the LT Si buffer is demonstrated experimentally.; Si_1−yGe_y/Si_1−xGe_x/Si_1−yGe_y HBT is proposed basing on the SiGe virtual substrate. DC and RF performances are simulated for different material and device structures by using mathematical method and Silvaco physical software. A series of Si_1−yGe_y/Si_1−xGe_x/Si_1−yGe_y HBTs with different Ge contents are grown, fabricated and characterized. It is proposed that integration of SiGe/Ge/SiGe HBT and photodiode is a promising candidate for optical transceiver used in 1.55μ m fiber communication.

机译：近年来，由于在应变Si HEMT，MOSFET，等器件中的潜在应用以及与CMOS集成的能力，Si晶片上松弛的SiGe虚拟衬底引起了很多兴趣。在这项工作中，研究了两种生长SiGe虚拟衬底的方法：顺应性衬底和低温（LT）硅缓冲液。硼硅玻璃顺应性基板是通过将硼和氧注入SOI晶片并进行高温退火而制成的。已证明20％BSG衬底是一种非常有效的顺应性衬底，可以生长0.3 Ge含量的高质量SiGe膜。已经详细研究了LT Si缓冲层上SiGe膜的生长。通过优化LT Si缓冲层的生长条件，可以改善SiGe膜的晶体质量。实验证明了LT Si缓冲液的应变顺应作用。 Si _{1-y Ge _{y / Si _{1-x Ge _{x / Si _{1-y <在SiGe虚拟衬底上提出了/ sub> Ge _{y HBT。使用数学方法和Silvaco物理软件，针对不同的材料和设备结构模拟了DC和RF性能。一系列Si _{1-y Ge _{y / Si _{1-x Ge _{x / Si _{1生长，制备和表征具有不同Ge含量的-y Ge _{y HBT。提出将SiGe / Ge / SiGe HBT与光电二极管集成是用于1.55μm光纤通信中的光收发器的有希望的候选者。}}}}}}}}}}}}

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作者
Luo, Yuhao.;
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作者单位

University of California, Los Angeles.;

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授予单位 University of California, Los Angeles.;
学科 Engineering Electronics and Electrical.
学位 Ph.D.
年度 2001
页码 170 p.
总页数 170
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Silicon germanium virtual substrate growth and silicon(1-y)germanium(y)/silicon(1-x)germanium(x)/silicon(1-y)germanium(y) HBTs for millimeter-wave applications.

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