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外文期刊>Optical Materials Express
>Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications
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Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications
We propose a robust fabrication process for growing Ge and Ge-based heterostructures in growth windows with Si sidewalls which can be applied to growth in thick Si optical waveguides. Sidewall growth is eliminated by the presence of a dielectric spacer layer which covers the sidewalls. We demonstrate the effectiveness of this process by selective-area growth of Ge and Ge/SiGe quantum wells, and show an improved performance and increased process reliability over previous work.
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