Selective area growth of germanium and silicon-germanium in silicon waveguides for on-chip optical interconnect applications

• 1. 应用于锗硅工艺中多电源间的静电保护结构 [P] . 中国专利： CN102545180B . 2014.05.21
• 2. 应用于锗硅工艺中多电源间的静电保护结构 [P] . 中国专利： CN102545180A . 2012-07-04
• 3. Selective Area Growth of Germanium and Silicon-Germanium in Silicon Waveguides for On-chip Optical Interconnect Applications [P] . 美国专利： US2013200431A1 . 2013-08-08

  机译： 片上光互连应用中硅波导中锗和硅锗的选择性面积增长

• 4. MANUFACTURING METHOD OF A SILICON-GERMANIUM NANODOT USING A SELECTIVE EPITAXIAL GROWTH OF A SILICON-GERMANIUM WITH A HIGH UNIFORMITY AND AN ANODIZED ALUMINUM NANO TEMPLATE, AND A SEMICONDUCTOR DEVICE THEREOF [P] . 韩国专利： KR20100023496A . 2010-03-04

  机译： 利用高均匀性和阳极氧化铝铝模板的硅锗的选择性表观生长来制造硅锗纳米粉及其半导体装置

• 5. SILICON-GERMANIUM NANO-WIRE MANUFACTURING METHOD USING ANODIZED ALUMINUM OXIDE NANO TEMPLATE AND A SELECTIVE EPITAXIAL GROWTH OF SILICON GERMANIUM, AND A SEMICONDUCTOR DEVICE THEREOF [P] . 韩国专利： KR20100023493A . 2010-03-04

  机译： 利用阳极氧化铝氧化铝模板和硅锗的选择性表观生长的硅锗纳米线制造方法及其半导体装置

• 1. Short-Range Optical Wireless Communications for Indoor and Interconnects Applications [J] . WANG Ke, Ampalavanapillai Nirmalathas, Christina Lim, 中兴通讯技术（英文版） . 2016,第002期
• 2. Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications [J] . S. A. Claussen, K. C. Balram, E. T. Fei, Optical Materials Express . 2012,第10期
• 3. Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications [J] . S. A. Claussen, K. C. Balram, E. T. Fei, Optical Materials Express . 2012,第10期
• 4. Silicon-germanium nanostructures for on-chip optical interconnects [J] . L. Tsybeskov, E.-K. Lee, H.-Y. Chang, Applied Physics A: Materials Science & Processing . 2009,第4期
• 5. Tunable Silicon-Germanium and Silicon Selective Etch in 5-Nanometer and Below Applications [C] . Chien-Pin Sherman Hsu China Semiconductor Technology International Conference . 2019
• 6. Selective epitaxial growth of silicon-germanium by a tubular hot-wall low pressure chemical vapor deposition system. [D] . Lee, I-Ming. 1997
• 7. Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application [O] . Chen Li, Hongxiao Lin, Junjie Li, 2020
• 8. Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications [O] . S. A. Claussen, K. C. Balram, E. T. Fei, 2012

• 1. TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon [J] . Junji Yamanaka ,Noritaka Usami ,Sevak Amtablian . 材料科学与化学工程（英文） . 2017,第1期
• 2. Quantitative Evaluation of an Epitaxial Silicon-Germanium Layer on Silicon [J] . Jie-Yi Yao ,Kun-Lin Lin ,Chiung-Chih Hsu . 显微镜研究（英文） . 2015,第4期
• 3. On-Chip Capillary Electrophoresis (Chip-CE) with Optical On-Chip Leaky-Waveguide-Based Detection [J] . Christoph Doering ,Matthias Grewe ,Ingo Steingoetter . 美国分析化学（英文） . 2014,第4期
• 4. Flexible Optical Waveguide Bent Loss Attenuation Effects Analysis and Modeling Application to an Intrinsic Optical Fiber Temperature Sensor [J] . Mustapha Remouche ,Francis Georges ,Patrick Meyrueis . 光学与光子学期刊（英文） . 2012,第1期
• 5. 一维硅锗纳米复合材料的制备及在场效应晶体管中的应用 [C] . 裴立宅 ,赵海生 ,谭伟 . 第六届中国功能材料及其应用学术会议 . 2007
• 6. 掺锗直拉硅中的杂质缺陷及其光伏应用研究 [A] . 朱鑫 . 2008