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首页> 外文会议>2012 IEEE Student Conference on Research and Development >Preparation and characterization of bulk nanoporous Sn and SnO2
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Preparation and characterization of bulk nanoporous Sn and SnO2

机译：块状纳米多孔Sn和SnO2的制备与表征

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摘要

EUV lithography has received much attention because of leading the next generation lithography for more compact, with node size as small as 40nm integrated circuit (IC) fabrication process. Additional, the EUV lithography has been extensively researched around the world for semiconductor future road map. Bulk nanoporous of Sn and SnO2 become reliable candidate to generate EUV lithography. This paper is focused on preparation and characterization of bulk nanoporous material of Sn and SnO2 to overcome debris problem. The sample was prepared by reaction solid-state of powder Sn without organic binder and SnO2 with organic binder with compacting and sintering process. The samples are characterized by morphology identification (SEM) and phase identification (XRD). The result is proposed as prospect for future EUV lithography research to get solid low plasma density target.
机译：由于领先的下一代光刻技术更紧凑，节点尺寸小至40nm集成电路（IC）制造工艺，因此EUV光刻技术受到了广泛的关注。另外，EUV光刻技术已在世界范围内广泛研究以用于半导体未来的发展路线图。 Sn和SnO 2 的大体积纳米孔成为产生EUV光刻的可靠候选者。本文着重研究了Sn和SnO 2 纳米块体多孔材料的制备与表征，以解决碎屑问题。通过压实和烧结过程，将不含有机粘结剂的Sn粉末和SnO 2 与有机粘结剂的固态反应制备样品。样品通过形态鉴定（SEM）和相鉴定（XRD）进行表征。该结果为将来获得极低的等离子体密度目标的EUV光刻研究提供了前景。

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