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Preparation and characterization of bulk nanoporous Sn and SnO2

机译：散装纳米孔Sn和SnO2的制备及表征

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摘要

EUV lithography has received much attention because of leading the next generation lithography for more compact, with node size as small as 40nm integrated circuit (IC) fabrication process. Additional, the EUV lithography has been extensively researched around the world for semiconductor future road map. Bulk nanoporous of Sn and SnO2 become reliable candidate to generate EUV lithography. This paper is focused on preparation and characterization of bulk nanoporous material of Sn and SnO2 to overcome debris problem. The sample was prepared by reaction solid-state of powder Sn without organic binder and SnO2 with organic binder with compacting and sintering process. The samples are characterized by morphology identification (SEM) and phase identification (XRD). The result is proposed as prospect for future EUV lithography research to get solid low plasma density target.
机译：EUV光刻引起了很大的关注，因为领先的下一代光刻更紧凑，节点尺寸为40nm集成电路（IC）制造工艺。 额外的是，EUV光刻已广泛研究了半导体未来路线图世界。 SN的散装纳米孔和SnO 2 成为可靠的候选人，以产生EUV光刻。 本文的重点是制备和表征Sn和SnO 2

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