Study of the conduction mechanism of the DNA memory FET

机译：DNA存储FET的传导机理研究

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The carrier behavior in DNA was examined using the DNA channel/SiO2/Si gate structure. The source/drain electrodes with a gap of 120 nm etching a SOI film was prepared and DNA was fixed between the electrodes. The dID/dVD shows the maximum value at the drain voltage of 0.3 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they were detrapped by the electric field in the channel.

机译：使用DNA通道/ SiO2 / Si门结构检查了DNA中的载流子行为。制备蚀刻SOI膜的间隙为120nm的源/漏电极，并将DNA固定在电极之间。 dID / dVD在漏极电压为0.3 V时显示出最大值。这种现象与DNA中被俘获和被俘获的电子有关。电子被鸟嘌呤基俘获，并被通道中的电场俘获。

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来源
《2014 IEEE International Meeting for Future of Electron Devices, Kansai》|2014年|1-2|共2页
会议地点 Kyoto(JP)
作者
Nakamura Shohei; Matsuo Naoto; Yamana Kazushige; Heya Akira; Takada Tadao; Fukuyama Masataka; Yokoyama Shin;
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作者单位

Department of Materials Science and Chemistry, University of Hyogo., Research Institute for Nanodevice and Bio Systems, Hiroshima University., 2167 Shosha, Himeji, 671-2280, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Charge carrier processes; DNA; DVD; Electrodes; Field effect transistors; Logic gates; Silicon; DNA; memory FET; transistor;

机译：电荷载体过程；脱氧核糖核酸; DVD;电极;场效应晶体管；逻辑门硅;脱氧核糖核酸;存储器FET;晶体管;

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Study of the conduction mechanism of the DNA memory FET

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