Evolution of Ga droplets into GaSb quantum rings

著录项

• 来源
  《2014 International Conference on Nanoscience and Nanotechnology》|2014年|35-38|共4页
• 会议地点 Adelaide(AU)
• 作者

  Kunrugsa M.; Prongjit P.; Khoklang K.; Panyakeow S.; Ratanathammaphan S.;

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• 作者单位

  Dept. of Electr. Eng., Chulalongkorn Univ., Bangkok, Thailand;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  III-V semiconductors; atomic force microscopy; crystallisation; drops; gallium compounds; liquid phase epitaxial growth; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor growth; semiconductor quantum dots; (001) substrates; GaAs; GaSb; antimony flux; atomic force microscopy; crystallization; droplet epitaxy technique; liquid droplets; quantum dots; quantum rings; reflection high energy electron diffraction; solid-source molecular beam epitaxy; Crystallization; Gallium arsenid;

  机译：III-V半导体;原子力显微镜;结晶;液滴;镓化合物;液相外延生长;分子束外延生长;反射高能电子衍射;半导体生长;半导体量子点;（001）衬底; GaAs; GaSb;锑通量原子力显微镜结晶液滴外延技术液滴量子点量子环反射高能电子衍射固体源分子束外延结晶砷化镓;