High Frequency InGaAs Nanowire MOSFETs

著录项

• 来源
  《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》|2015年|1-4|共4页
• 会议地点 New Orleans LA(US)
• 作者

  Lind E.;

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• 作者单位

  Dept. of Electr. Inf. Technol., Lund Univ., Lund, Sweden;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  III-V semiconductors; MOSFET; elemental semiconductors; gallium arsenide; indium compounds; millimetre wave transistors; nanowires; silicon; DC characterization; InGaAs; InP substrates; RF characterization; Si; Si substrates; compact modeling; frequency 100 GHz; frequency 155 GHz; frequency 290 GHz to 250 GHz; lateral nanowire MOSFET; lateral tri-gate nanowire devices; nonparabolic ballistic charge-current compact model; rectangular nanowire FET; vertical gate-all-around InAs wires; vertical nanowire MOSFET; voltage 0.;

  机译：III-V型半导体; MOSFET;元素半导体;砷化镓;铟化合物;毫米波晶体管;纳米线;硅; DC表征; InGaAs; InP衬底; RF表征; Si; Si衬底;紧凑建模;频率100 GHz;频率155 GHz ；频率290 GHz到250 GHz；侧面纳米线MOSFET；侧面三栅纳米线器件；非抛物线弹道电荷电流紧凑模型；矩形纳米线FET；垂直全能InAs线；垂直纳米线MOSFET；电压0。;