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首页> 外文会议>2016 COES annual conference proceedings >Effect of Heating Rate on Bonding Strength of Pressure-free Sintered Nanosilver Joint
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Effect of Heating Rate on Bonding Strength of Pressure-free Sintered Nanosilver Joint

机译：加热速率对无压烧结纳米银接头粘结强度的影响

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Chip-bonding by sintering silver particlesrn(micron-scale or nanometer-scale) is widely believed to replacernsoldering for manufacturing high-performance powerrnsemiconductor devices and modules because sintered silverrnjoints are better for heat dissipation and more reliable inrntemperature-cycling and power-cycling tests than solderedrnjoints. Common raw materials used for the silver sinteringrnprocess are in the form of paste consisting of silver particlesrnmixed in an organic system of binders, surfactants, andrnsolvents. In our recent studies, we developed a mathematicalrnmodel based on diffusion of solvent molecules and viscous-flowrnmechanics of a silver paste to show that drying of the paste inrnthe bonding process is a critical step in determining the bondlinernmicrostructural and mechanical quality. Our modelingrnresults showed that stresses and strains generated in thernshrinking silver paste were responsible for observedrndelamination and cracking in the sintered bond-line. In thisrnstudy, we extended the modeling analysis to investigate effectrnof heating rate on the bond-line quality. A numericalrnsimulation algorithm of the model was developed to determinernthe time-dependent physical properties of the silver paste asrnthe material being dried at different heating rates. Thernsimulation results showed a strong dependence of the relativerndensity of the sintered bond-line on heating rate. By loweringrnthe heating rate, the relative density of the sintered silver couldrnbe increased. Higher sintered density would mean strongerrnbonding strength, and this was verified by our experimentalrndata. The findings of this study can be used to optimize thernmanufacturing process that uses sintering of silver paste forrnbonding power semiconductor chips.
机译：人们普遍认为，通过烧结银颗粒（微米级或纳米级）来进行芯片键合可以替代用于制造高性能功率半导体器件和模块的焊接，因为烧结的银接头比散热更好，并且比温度循环和功率循环测试更可靠焊接接头。用于银烧结过程的常用原材料为糊状，该糊状由混合在粘合剂，表面活性剂和溶剂的有机体系中的银颗粒组成。在我们最近的研究中，我们基于溶剂分子的扩散和银浆的粘性流力学建立了数学模型，以表明在粘合过程中对浆料进行干燥是确定粘合线微结构和机械质量的关键步骤。我们的建模结果表明，在收缩的银浆中产生的应力和应变是造成烧结粘结线中分层和开裂的原因。在本研究中，我们扩展了模型分析以研究加热速率对粘合线质量的影响。开发了该模型的数值模拟算法，以确定在不同加热速率下干燥的材料中银浆随时间的物理特性。模拟结果表明，烧结粘结线的相对密度对加热速率有很大的依赖性。通过降低加热速率，可以提高烧结银的相对密度。更高的烧结密度将意味着更强的粘结强度，这已通过我们的实验数据得到验证。这项研究的结果可用于优化制造工艺，该工艺使用烧结银浆的方法粘合功率半导体芯片。

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