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首页> 外文会议>2016 COES annual conference proceedings >Ultra-Low Inductance Vertical Phase Leg Design with EMI Noise Propagation Control for Enhancement Mode GaN Transistors
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Ultra-Low Inductance Vertical Phase Leg Design with EMI Noise Propagation Control for Enhancement Mode GaN Transistors

机译：具有增强型GaN晶体管的EMI噪声传播控制的超低电感垂直相脚设计

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摘要

This paper presents an improved phase leg powerrnloop design for enhance mode lateral structure Gallium Nitridern(GaN) transistors. Static characterization results of a 650V/30ArnGaN transistor are presented to determine the designrnparameters of the gate driver circuits. The control of CommonrnMode (CM) noise current propagation is considered during therngate driver design by optimizing the power distribution andrngrounding structure of the gate driver and digital controlrncircuits. By differentiating the propagation path impedance ofrndigital control circuits and their power supply circuits,rnconductive CM noise can propagate through power supply pathrnto protect the digital control circuits. In order to reduce currentrncommutation loop inductance within the GaN phase leg, anrnimproved power loop design with vertical structure is proposedrnfor lateral structure GaN transistors which can significantlyrnreduce power loop inductance compared with conventionalrnlateral power loop design. The design is verified throughrnexperiments on a phase leg prototype which prove thernperformance of the proposed phase leg on the overvoltagernreduction during current transition along with less crosscouplingrnbetween power loop and gate loop compared withrnconventional lateral power loop design. A full bridge voltagernsource inverter is implemented with the designed phase leg andrntested with EMI noise measurement that verifies therneffectiveness of the CM propagation path control.
机译：本文提出了一种改进的相脚功率环设计，用于增强模式横向结构氮化镓（GaN）晶体管。给出了650V / 30ArnGaN晶体管的静态表征结果，以确定栅极驱动器电路的设计参数。在栅极驱动器设计过程中，通过优化栅极驱动器和数字控制电路的功率分配和接地结构，可以考虑控制共模噪声电流传播。通过区分数字控制电路及其电源电路的传播路径阻抗，传导性CM噪声可通过电源路径传播以保护数字控制电路。为了减少GaN相支路内的电流换向环路电感，提出了横向结构GaN晶体管改进的垂直结构功率环路设计，与传统的横向功率环路设计相比，该晶体管可以显着降低功率环路电感。通过对相支路原型的实验验证了该设计，该相支路原型证明了所提出的相支路在电流过渡期间过压降低方面的性能，并且与常规横向功率环路设计相比，功率环路与栅极环路之间的交叉耦合更少。采用设计的相脚实现全桥电压源逆变器，并通过EMI噪声测量进行测试，以验证CM传播路径控制的有效性。

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  • 来源
  • 会议地点 Blacksburg VA(US)
  • 作者

    Xuning Zhang; Zhiyu Shen; Nidhi Haryani; Dushan Boroyevich; Rolando Burgos;

  • 作者单位

    Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061 USAXuning45@vt.edu;

    Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061 USA;

    Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061 USA;

    Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061 USA;

    Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061 USA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    GaN HMET; Characterization; Gate Driver; EMI; CM noise propagation;

    机译：GaN HMET ;;表征;;栅极驱动器;; EMI ;; CM噪声传播;

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